npn TIP120-121-122 05/10/2012 comset semiconductors 1 | 3 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are intended for use in pow er linear and switching applications. pnp complements are tip125-126-127 compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP120 60 v tip121 80 tip122 100 v ceo collector-emitter voltage TIP120 60 v tip121 80 tip122 100 v ebo emitter-base voltage TIP120 5 v tip121 tip122 i c collector current TIP120 5 a tip121 tip122 i cm collector peak current TIP120 8 a tip121 tip122 i b base current TIP120 120 ma tip121 tip122 p t power dissipation @ t c < 25 TIP120 65 watts tip121 tip122 @ t a < 25 TIP120 2 tip121 tip122 t j junction temperature TIP120 150 c tip121 tip122 t s storage temperature range TIP120 -65 to +150 tip121 tip122
npn TIP120-121-122 05/10/2012 comset semiconductors 2 | 3 semiconductors thermal characteristics symbol ratings value unit r thj-case from junction-case 1.92 c/w r thj-amb from junction-ambient 62.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0,v cb = v cbo max TIP120 - - 0.2 ma tip121 tip122 i ceo collector cutoff current i e = 0 v ce = 1/2 v ceo max TIP120 - - 0.5 ma tip121 tip122 i ebo emitter cutoff current v eb = 5 v, i c = 0 TIP120 - - 2 ma tip121 tip122 v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 TIP120 60 - - v tip121 80 - - tip122 100 - - v ce(sat) collector-emitter saturation voltage (*) i c = 3 a, i b = 12 ma TIP120 - - 2 v tip121 tip122 i c = 5 a, i b = 20 ma TIP120 - - 4 tip121 tip122 v be(on) base-emitter voltage (*) i c = 3 a, v ce = 3 v TIP120 - - 2.5 v tip121 tip122 h fe dc current gain (*) v ce = 3.0 v, i c = 0.5 a TIP120 1000 - - - tip121 tip122 v ce = 3.0 v, i c = 3 a TIP120 1000 - - tip121 tip122 c ob output capacitance i e = 0, v cb = 10 v, f test = 1mhz TIP120 - - 200 pf tip121 tip122 (*) pulse width 300 s, duty cycle 2.0%
npn TIP120-121-122 05/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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